GALVANOMAGNETIC EFFECTS IN A NON-HOMOGENEOUS SEMICONDUCTORSIERANSKI K; SZATKOWSKI J.1979; ACTA PHYS. POL., A; ISSN 0587-4246; POL; DA. 1979; VOL. 56; NO 1; PP. 99-107; BIBL. 9 REF.Article

DISORDER SCATTERING IN MIXED PB_1-XSN_XTE-TYPE SEMICONDUCTORSSIERANSKI K; SZATKOWSKI J.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 107; NO 2; PP. K87-K90; BIBL. 9 REF.Article

THEORY OF THE FREE-CARRIER ABSORPTION IN ZINCBLENDE NARROW-GAP SEMICONDUCTORSSIERANSKI K; SZATKOWSKI J.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 104; NO 1; PP. 57-67; ABS. GER; BIBL. 8 REF.Article

A NEW METHOD OF OBTAINING CRYSTALLINE CD₃AS₂ FILMS ON NON-CRYSTALLINE SUBSTRATES.PAWLIKOWSKI JM; SIERANSKI K; SZATKOWSKI J et al.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 30; NO 1; PP. 99-102; BIBL. 9 REF.Article

Tight-binding model for Zn₃As₂ valence bandsSIERANSKI, K; SZATKOWSKI.Physica status solidi. B. Basic research. 1992, Vol 173, Num 2, pp K25-K28, issn 0370-1972Article

EFFECTIVE MASS OF HEAVY HOLES IN CD_XHG_1-XTE AT 4.2 TO 300 K².SIERANSKI K; SZATKOWSKI J; MAJCHROWSKA E et al.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 77; NO 2; PP. K91-K95; BIBL. 13 REF.Article

Simple interface-layer model for the nonideal characteristics of the Schottky-Barrier diodeSZATKOWSKI, J; SIERANSKI, K.Solid-state electronics. 1992, Vol 35, Num 7, pp 1013-1015, issn 0038-1101Article

Electronic energy levels of an ideal vacancy in II₃-V₂ compoundsSZATKOWSKI, J; SIERANSKI, K.Solid state communications. 1995, Vol 93, Num 7, pp 595-598, issn 0038-1098Article

Universal tight-binding model for II-V semiconducting compoundsSIERANSKI, K; SZATKOWSKI, J.Solid state communications. 1992, Vol 83, Num 9, pp 717-719, issn 0038-1098Article

Theory of free-carrier magnetoabsorption in mixed zincblende narrow-gap semiconductorsSZATKOWSKI, J; SIERANSKI, K.Physica status solidi. B. Basic research. 1983, Vol 120, Num 1, pp 263-272, issn 0370-1972Article

Influence of interface states on the electrical properties of Mg-Zn₃P₂ junctionsSZATKOWSKI, J; SIERANSKI, K.Physica status solidi. A. Applied research. 1988, Vol 106, Num 1, pp K31-K34, issn 0031-8965Article

Tight-binding model for Zn₃P₂ valence bandsSIERANSKI, K; SZATKOWSKI, J.Solid state communications. 1993, Vol 88, Num 8, pp 663-666, issn 0038-1098Article

Electrical conductivity of Zn₃As₂SZATKOWSKI, J; SIERANSKI, K.The Journal of physics and chemistry of solids. 1990, Vol 51, Num 3, pp 249-251, issn 0022-3697Article

Interface effects on Mg-Zn₃P₂ Schottky diodesSZATKOWSKI, J; SIERANSKI, K.Solid-state electronics. 1988, Vol 31, Num 2, pp 257-260, issn 0038-1101Article

Electrical properties of Mg-Zn₃P₂ contactsSZATKOWSKI, J; SIERANSKI, K.Physica status solidi. A. Applied research. 1988, Vol 106, Num 2, pp 473-477, issn 0031-8965Article

Electrical properties of Zn₃P₂ at room temperaturesSIERANSKI, K; SZATKOWSKI, J.Physica status solidi. A. Applied research. 1989, Vol 111, Num 1, pp K57-K60, issn 0031-8965Article

Electrical conductivity of Zn₃P₂SIERANSKI, K; SZATKOWSKI, J.Physica status solidi. A. Applied research. 1986, Vol 94, Num 2, pp K133-K135, issn 0031-8965Article

Free-carrier absorption in semimagnetic semiconductorsSIERANSKI, K; SZATKOWSKI, J.Physica status solidi. B. Basic research. 1985, Vol 128, Num 1, pp K33-K35, issn 0370-1972Article

Intraband absorption due to alloy scattering in lead chalcogenide semiconductorsSIERANSKI, K; SZATKOWSKI, J.Physica status solidi. B. Basic research. 1983, Vol 118, Num 2, pp 871-879, issn 0370-1972Article

NON-LINEAR ELECTRICAL EFFECTS IN EPITAXIAL GRADED-GAP CD_XHG_1-XTE LAYERSSZATKOWSKI J; KACZMARSKI K; KOCHAN B et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 70; NO 1; PP. 49-55; BIBL. 6 REF.Article

ELECTRICAL TRANSPORT PROPERTIES OF EPITAXIAL GRADED-GAP CD_XHG_1-XTE LAYERS.SZATKOWSKI J; SIERANSKI K; PAWLIKOWSKI JM et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 42; NO 2; PP. 721-727; ABS. ALLEM.; BIBL. 31 REF.Article

Characteristics of Mg-Zn₃P₂:Cd contactsSZATKOWSKI, J; SIERANSKI, K; MISIEWICZ, J et al.Physica status solidi. A. Applied research. 1988, Vol 106, Num 2, pp 551-555, issn 0031-8965Article

FERMI LEVEL IN CD_XHG_1-XTE².SIERANSKI K; SZATKOWSKI J; PAWLIKOWSKI JM et al.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 81; NO 1; PP. K67-K70; BIBL. 8 REF.Article

Deep level defects in proton irradiated p-type Al0.5Ga0.5AsSZATKOWSKI, J; SIERANSKI, K; PLACZEK-POPKO, E et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4967-4969, issn 0921-4526, 3 p.Conference Paper

Deep hole traps in Be-doped Al_0.2Ga_0.8As layers grown by molecular beam epitaxySZATKOWSKI, J; SIERANSKI, K; HAJDUSIANEK, A et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 345-348, issn 0921-4526, 4 p.Conference Paper